2 Sep Gate leakage current. IGSS. VGS = ±25 V, VDS = 0 V. —. —. ± µA. Gate− source breakdown voltage. V (BR) GSS. IG = ±10 µA, VDS = 0 V. 28 Jan K Datasheet PDF – N Channel MOSFET – Toshiba, 2SK datasheet, K pdf, K pinout, K equivalent, data, circuit, output. 28 Jan Part Number: K Function: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Maker: Toshiba Pinouts.
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K2996 18″, H 1″, W 21″. Discussion k2996 ‘ General Electronics Chat k2996 j2996 by imraneesaJun 26, If you charge the gate negative, the drain to source resistance should be too high to measure – MOSFETs have a parasitic “body diode” from drain to source, that diode is normally reversed biased with the correct polarity drain voltage applied.
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